Technology
GaN power
Gallium nitride or GaN is a wide bandgap semiconductor in the III-V groups with properties that make it especially well suited to high-performance switching applications including high-frequency switches and optoelectronics.
INEX develops and manufactures high voltage GaN power devices. We are able to support high voltage vertical and lateral GaN high electron mobility transistor (HEMT), and diode development on a range of substrates.
GaN HEMT’s have high power density and can tolerate high operating temperatures. As new higher voltage capable GaN HEMT’s are developed GaN HEMT’s will help to improve performance and efficiency of DCDC converters, power inverters, electric vehicle chargers and other critical power conversion devices. Growing the application of GaN power devices into new applications.
MEMS sensors and actuators
INEX has produced over 50 different MEMS devices for a wide range of applications ranging from accelerometers for geological surveying to devices used in space exploration.
We have the ability to deposit and fabricate complex structures that can perform critical sensing functions in a range of applications. The devices we have created are in service today in extremely hostile environments, including the exploration of the surface of Mars.
Novel materials & structures
INEX supports a wide customer base of innovative customers with a range of novel material and structure processing including:
• Silicon carbide based electronics devices.
• Diamond based electronics devices.
• Microfabricated vapour cells for atomic devices such as vapour-cell atomic clocks, magnetometers or other quantum devices.
• Device fabrication.
• Biotechnology and biosensor manufacture.
GaN RF
INEX has been working to develop GaN devices and manufacturing processes since 2015 and now has a GAN Radio Frequency (RF) monolithic microwave integrated circuit (MMIC) platform. INEX can support application-specific RF GaN MMIC device development via a semiconductor development kit or SDK/PDK.
Our RF GaN MMICs are undergoing high-volume production release, and INEX can support development programmes and prototyping today.
MMICs are critical ‘systems on a chip’ used for high-frequency switching applications such as low noise amplifiers (LNA), high power amplifiers (HPA), and medium power amplifiers (MPA), which are essential for state-of-the-art radar and communication hardware used in the defence, automotive, and telecommunications sectors.
Optical semiconductor devices
INEX is producing application specific LED’s and photo diodes based on indium antimonide today. Indium antimonide is a III-V group narrow bandgap semiconductor. These LED’s and photo diodes are used in safety critical sensing systems in volume today.
We can support the development of new customised LED’s, photo diodes and other optical devices either using indium antimonide or other materials such as GaN.