GaN process development engineer
INEX is uniquely positioned to engage with and exploit a range of growing specialist and disruptive and micro-technologies in markets including Sensing, Connectivity, and RF & Power Devices. We are looking for high-calibre individuals to join the business, to help share in its future and build presence in the marketplace. In joining a dynamic and highly skilled team, you would be part of INEX’s growth story.
INEX is keen to hear from self-motivated individuals with cleanroom experience in manufacturing specialist active electronic devices based on compound semiconductors and MEMS. INEX’s business is in the unusual and the exceptional, and we are looking for innovative engineers with a demonstrated interest in creating and developing products in that vein.
The role
INEX is currently recruiting a GaN Process Development Engineer. The primary responsibilities and duties associated with this role are as follows:
- Fabricate batches of wafers with MMIC, active and passive devices on GaN on SiC/Si/Sapphire throughout the full process flow including e-beam, stepper and contact lithography, metallisation, dry and wet etch , and DC & RF test.
- Work closely with the advanced process development engineers to define new process requirements and targets, design/integrate wafer fab process flows.
- Create test structure layouts to fabricate and characterise new device technologies and demonstrate margin for volume manufacturing.
- Specify critical in-line and PCM process control metrics for high volume manufacturing.
- Define test conditions and conduct wafer-scale DC/RF testing of PCM structures and discrete active devices.
- Conduct RF testing of discrete HEMTs, passives. Develop appropriate device models and perform device simulation.
- Interpret the above test results and support the development of INEX’s 0.5µm and 0.25µm Process Design Kits (PDKs).
- Participate in on-going continuous yield/performance efforts and establish PDKs for GaN devices.
- Implement new quality techniques and actively participate in resolving quality issues.
INEX is currently recruiting a GaN Process Development Engineer. The primary responsibilities and duties associated with this role are as follows:
- Qualified to degree or Ph.D. level in EE, Physics, Chemistry, Material Science, or related discipline
- At least 3 years of cleanroom fabrication experience
- Significant hands-on experience in fabricating compound semiconductor or MEMS devices. Skills required include:
- lithography (e-beam and/or stepper experience required)
- etch (wet & dry)
- deposition (dielectric, metal, and electroplating)
- Mask layout design experience
- Failure Analysis and Surface Analytical Techniques
- Wafer dicing, wire bonding, and package design
- Good knowledge and understanding of GaN devices in particular transistors/MMICs, and materials (device physics, processing, measurements, modelling, simulation)
- In-depth knowledge of process steps required to make power/RF GaN devices and experience with wide band-gap material processing is preferred for this role.
- Design knowledge of RF products, compound semiconductors, and MEMS devices would be key assets appropriate for this role.
- Familiarity with process control (SPC) and design-for-manufacture practices
- Ability to work independently with minimum supervision